Результаты поиска LF411ACN/NOPB

Найдено 4 результатов.

• LF411ACNNOPB
  National Semiconductor — National Semiconductor LF411ACNNOPB Date_code: 08+ Quantity: 100
• LF411ACN/NOPB
  National Semiconductor — National Semiconductor LF411ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 162 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 300ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.3 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±19 V Other Names: *LF411ACN, *LF411ACN/NOPB, LF411ACN
• LF411ACN/NOPB
  National Semiconductor — National Semiconductor LF411ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 162 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 300ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.3 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±19 V Other Names: *LF411ACN, *LF411ACN/NOPB, LF411ACN
• LF411ACN/NOPB
  TI (Texas Instruments) — National Semiconductor LF411ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 1.8mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 1.8 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 162 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Single Number Of Circuits: 1 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 15 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 300ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 10 to 44 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.3 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±19 V Other Names: *LF411ACN, *LF411ACN/NOPB, LF411ACN